封装/外壳BG-T7526K-1
封装Tray
MXHTS85411001
RoHS compliantyes
Packing TypeTRAY
Moisture LevelNA
ConfigurationElectrical Triggered Phase Control Thyristor
VDRM / VRRM [V]2800.0
VDRM/ VRRM (V)2800.0 V
HousingDisc dia 75mm height 26mm / Ceramic
ITAVM/TC [A/°C] (@180° el sin)1220/85
rT [mΩ] (@Tvj max) max0.275
Tvj [°C] max125.0
ITSM22500.0A
VT0 [V] (@Tvj max) max1.0
∫I2dt [A²s · 103] (@10ms, Tvj max)2531.0
RthJC [K/kW] (@180° el sin) max18.4
RthJC [K/kW] (@180° el sin) max18.4
rT [mΩ] (@Tvj max) max0.275
Clamping force [kn] min max20.0 45.0
ITAVM1220 (180 ° el sin)
ITAVM/TC [A/°C] (@180° el sin)1220/85
Tvj [°C] max125.0
VT/IT [V/kA] (@Tvj max)1.38/1.0
VT0 [V] (@Tvj max) max1.0
∫I2dt [A²s · 103] (@10ms, Tvj max)2531.0
ITSM [A] (@10ms, Tvj max)22500.0
VT/IT [V/kA] (@Tvj max)1.38/1.0
Clamping force [kn] min max20.0 45.0
tq [µs]350.0
ITSM [A] (@10ms, Tvj max)22500.0
无铅情况/RoHs无铅/符合RoHs